| PART |
Description |
Maker |
| TS1GJF150 |
1GB USB2.0 JetFlash垄芒
1GB USB2.0 JetFlash?
|
Transcend Information. Inc.
Transcend Information. ...
|
| TS1GJF160 |
1GB USB2.0 JetFlash?
|
Transcend Information. ...
|
| TS1GJF130 |
1GB USB2.0 JetFlash
|
Transcend Information. Inc.
|
| TS1GJF110 |
1GB USB2.0 JetFlash??10
|
Transcend Information. Inc.
|
| TS1GJFV30 |
1GB USB2.0 JetFlash V30
|
Transcend Information. Inc.
|
| TS4GJF300 |
4GB USB2.0 JetFlash垄莽300
4GB USB2.0 JetFlash?300
|
Transcend Information. Inc.
|
| TS8GJF300 |
8GB USB2.0 JetFlash垄莽300
8GB USB2.0 JetFlash?300
|
Transcend Information. Inc.
|
| KBE00S003M-D411 KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2
From old datasheet system
1Gb NANDx2 256Mb Mobile SDRAMx2
|
SAMSUNG[Samsung semiconductor]
|
| W3EG64128S-AD4 |
1GB - 2x64Mx64 DDR SDRAM UNBUFFERED w/PLL 1GB 2x64Mx64 DDR SDRAM的缓冲瓦锁相
|
Electronic Theatre Controls, Inc.
|
| TS512MJF110 |
512MB USB2.0 JetFlash垄芒110
512MB USB2.0 JetFlash?10
|
Transcend Information. Inc.
|
| TS4GJF220 |
4GB USB2.0 JetFlash垄芒220
4GB USB2.0 JetFlash?20
|
Transcend Information. Inc.
|
